IXSN80N60AU1

Overview

The IXSN80N60AU1 is a high-power Insulated Gate Bipolar Transistor (IGBT) with an integrated Fast Recovery Epitaxial Diode (FRED), manufactured by IXYS. It utilizes the miniBLOC (SOT-227B) package, featuring aluminum-nitride isolation for high power dissipation and a 3000 Vrms isolation voltage. Key electrical parameters include a collector-emitter breakdown voltage (VCES) of 600 V, a continuous collector current (IC25) of 160 A at 25°C case temperature, and a maximum saturated collector-emitter voltage (VCE(sat)) of 3 V at IC90. The device supports a peak pulsed current (ICM) of 320 A and offers short-circuit withstand capability of 10 µs. Thermal resistance from junction to case (RthJC) is 0.25 K/W for the IGBT and 0.80 K/W for the diode.

Feature Summary

• Aluminum-nitride isolation provides high power dissipation and 3000 Vrms isolation voltage.
• Integrated Fast Recovery Epitaxial Diode (FRED) ensures short reverse recovery time (trr) and low reverse recovery charge.
• Low collector-to-case capacitance reduces radio frequency interference (RFI).
• Low package inductance facilitates easy driving and protection.

Applications

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm that the part matches the specific SOT-227B miniBLOC package dimensions and terminal configuration. Ensure compliance with RoHS directives if required by your manufacturing standards. Check for any specific handling instructions related to the aluminum-nitride substrate during assembly.

Selection Notes

Select this component for applications requiring high current density and robust isolation in a single package. The 600 V rating and 160 A continuous current make it suitable for medium-to-high power industrial converters. Consider the thermal resistance values when designing heatsinking solutions. The integrated FRED simplifies circuit design by eliminating the need for a separate anti-parallel diode.

Part Context

This IGBT belongs to IXYS's high-power discrete semiconductor lineup, designed for demanding industrial and power conversion environments. The miniBLOC package allows for efficient mounting using two screws, offering space savings compared to separate IGBT and diode configurations. It is part of a series optimized for low on-state losses and high switching performance.

Replacement Considerations

Direct replacements must match the 600 V VCES, 160 A IC25, and SOT-227B/miniBLOC package footprint. Verify pinout compatibility (Gate, Collector, Emitter) and thermal characteristics. Alternative parts should offer similar VCE(sat) and switching times to maintain circuit performance without redesigning the gate drive or thermal management system.

FAQ

What is the maximum short-circuit withstand time for the IXSN80N60AU1?

The device has a short-circuit withstand time (tSC) of 10 µs under specified test conditions (VGE=15 V, VCE=360 V, TJ=125°C, RG=22 Ω).

How does the IXSN80N60AU1 handle isolation requirements?

It features aluminum-nitride isolation providing a dielectric strength of 3000 Vrms (tested at 1 mA for 1 second) and 2500 Vrms for 1 minute at 50/60 Hz.

What are the typical switching times for this IGBT?

At TJ=25°C, the turn-on delay (td(on)) is typically 140 ns, rise time (tri) is 220 ns, turn-off delay (td(off)) is 300-600 ns, and fall time (tfi) is 450-600 ns.