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The IXST30N60CD1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 30A at 25°C. The device utilizes Si technology and is housed in a TO-247AD-3 package designed for through-hole mounting. Key electrical parameters include a maximum gate-emitter voltage of ±20V and an operating temperature range from -55°C to +150°C.
Verify the specific suffix 'CD1' against the official IXYS datasheet to confirm the exact pinout, thermal resistance values, and packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm availability status as distribution channels may vary.
Select this component when a 600V IGBT with integrated diode functionality and short-circuit protection is required. The TO-247AD package facilitates efficient heat dissipation for high-current applications. Evaluate thermal management needs based on the specified power dissipation limits and ambient operating temperatures.
This part belongs to the IXYS S-Series of IGBTs, which are characterized by their fast switching speeds and rugged short-circuit withstand capabilities. The series is engineered for high-reliability power electronics, offering a balance between low on-state voltage and fast turn-off times.
Publicly confirmed substitute part numbers for IXST30N60CD1 were not found in the provided source material. Verify compatibility with alternative models such as IXSK30N60CD1 or similar S-Series variants only if official cross-reference documentation confirms identical electrical and mechanical specifications.
The datasheet specifies Short Circuit Safe Operating Area (SCSOA) capability, ensuring robustness during short-circuit events, though the exact duration in microseconds should be verified in the official electrical characteristics table.
Yes, the device is an IGBT/Diode Combi-Pack, meaning it contains an integrated anti-parallel diode within the same package.
The maximum operating junction temperature is specified as 150°C.