IXTH32P20T

$4.74

Description：MOSFET P-CH 200V 32A TO247
Series：TrenchP™
Mfr：Littelfuse Inc.
Package：Tube

SKU:d355ecf844ec Category: Single FETs, MOSFETs Brand: Littelfuse Inc.

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Product introduction

IXTH32P20T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET P-CH 200V 32A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTH32P20T

Description：MOSFET P-CH 200V 32A TO247
Series：TrenchP™
Mfr：Littelfuse Inc.
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：130mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：185 nC @ 10 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：14500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 (IXTH)
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IXTH32P20T

IXTH32P20T

Single FETs, MOSFETs Overview

The IXTH32P20T is a P-Channel Enhancement Mode Power MOSFET manufactured by Littelfuse Inc. (originally IXYS). It features a -200V drain-source voltage rating and a continuous drain current of -32A at 25°C case temperature. The device has a maximum on-state resistance of 130mΩ and supports a pulsed drain current of 96A. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 300W. The component utilizes TrenchPTM technology and is housed in an international standard TO-247 package.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust transient handling
Extended forward-bias safe operating area (FBSOA)
Fast intrinsic body diode with low reverse recovery time
Low on-state resistance and gate charge for efficient switching

Single FETs, MOSFETs Applications

High-side switching circuits
Push-pull amplifier configurations
DC chopper applications
Automatic test equipment
Battery charger systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as the IXTH32P20T designation corresponds to the TO-247 form factor. Confirm that the sourcing channel provides original manufacturer documentation from Littelfuse or IXYS. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the datasheet revision date to confirm technical specifications have not changed.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage P-channel switching with moderate current capabilities. The TO-247 package facilitates effective thermal management through direct mounting to heatsinks. Consider the avalanche rating when designing circuits prone to inductive load switching. Evaluate the gate charge requirements against your driver capability to ensure optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the IXTP/IXTA/IXTQ/IXTH series of P-Channel MOSFETs sharing identical electrical characteristics but differing in package style. The IXTH suffix specifically denotes the TO-247 leaded package, which offers superior thermal performance compared to surface-mount alternatives like the TO-263 (IXTA) or standard TO-220 (IXTP).