IXTL2X180N10T

$10.36

Description：MOSFET 2N-CH 100V 100A I5-PAK
Series：Trench

SKU:2583a766b1bd Category: FET, MOSFET Arrays Brand: Littelfuse Inc.

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Product introduction

IXTL2X180N10T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET 2N-CH 100V 100A I5-PAK. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IXTL2X180N10T

Description：MOSFET 2N-CH 100V 100A I5-PAK
Series：Trench
Mfr：Littelfuse Inc.
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：100A
Rds On (Max) @ Id, Vgs：7.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：6900pF @ 25V
Power - Max：150W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：ISOPLUSi5-PAK™
Supplier Device Package：ISOPLUSi5-Pak™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IXTL2X180N10T

IXTL2X180N10T

FET, MOSFET Arrays Overview

The IXTL2X180N10T is a dual N-channel power MOSFET from Littelfuse, packaged in the ISOPLUSi5-PAK™. It features a 100V drain-source breakdown voltage and a continuous drain current of 100A to 200A depending on thermal conditions. The device exhibits a low on-resistance of 9 milliohms, ensuring efficient power handling. Key switching parameters include a rise time of 54 ns and a fall time of 31 ns. Maximum operating temperature reaches +175°C with a power dissipation rating of 150W.

FET, MOSFET Arrays Feature Summary

Dual channel configuration for compact circuit design
Low on-resistance for high efficiency
High temperature operation capability

FET, MOSFET Arrays Applications

Low voltage high current power conversion
DC-DC converter circuits
Motor drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer designation, as this component appears in Littelfuse catalogs but also carries IXYS branding in distributor listings. Confirm the exact package marking and datasheet revision to ensure compatibility with your design requirements before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring robust dual-channel switching at 100V. The low RDS(on) minimizes conduction losses. Ensure adequate thermal management is provided to handle the specified power dissipation and maintain junction temperatures within safe limits during operation.

FET, MOSFET Arrays Part Context

This part belongs to the HiPerFET or Gen1 series of trench gate power MOSFETs. These devices are engineered for low voltage and high current applications where minimizing on-state resistance is critical for system performance and energy efficiency.