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IXTP4N60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 4A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTP4N60P
- Description：MOSFET N-CH 600V 4A TO220AB
- Series：PolarHV™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：635 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IXTP4N60P
Single FETs, MOSFETs Overview
The IXTP4N60P is a PolarHV N-Channel Power MOSFET manufactured by IXYS. It features a 600 V drain-source breakdown voltage and a continuous drain current of 4 A. The device has a maximum on-resistance of 1.7 Ohms at 25°C. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 100 W of power. The component utilizes a TO-220AB package for through-hole mounting.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 600 V breakdown rating
- Enhanced avalanche ruggedness for robust operation
- Fast intrinsic body diode for efficient switching
Single FETs, MOSFETs Applications
- Power factor correction circuits
- DC-DC converters
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the TO-220AB package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 100 W power dissipation under your operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V rated N-Channel MOSFET with moderate current handling is required in a through-hole package. Compare the 1.7 Ohm on-resistance against system efficiency targets. Consider the TO-220AB form factor if surface-mount alternatives like the IXTA variant are unsuitable for the mechanical design.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS PolarHV series, designed for high-voltage applications. It shares the 600 V family characteristics with other models like the IXTQ14N60P but offers lower current capacity suited for smaller power stages. The technology leverages silicon planar gate structures for reliable performance.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the IXTU4N60P and IXTP4N60P from the same manufacturer. Cross-brand replacements require matching the 600 V rating, 4 A current, and TO-220 package.
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