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IXTP76N075T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 75V 76A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTP76N075T
- Description：MOSFET N-CH 75V 76A TO220AB
- Series：TrenchMV™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2580 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：176W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IXTP76N075T
Single FETs, MOSFETs Overview
The IXTP76N075T is an N-channel enhancement mode Power MOSFET manufactured by IXYS. It features a breakdown voltage (VDS) of 75 V and a continuous drain current (ID) of 76 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 12 mΩ at VGS = 10 V. It is housed in a TO-220AB through-hole package with a power dissipation rating of 150 W. The component operates within a junction temperature range of -55°C to +175°C and includes avalanche rating capabilities.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust energy handling
- Low on-resistance for efficient conduction
- Enhancement mode operation
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm package dimensions and thermal characteristics match the intended PCB layout and heatsinking strategy. Check for any obsolescence notices or lifecycle status updates from IXYS before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current switching applications requiring through-hole mounting. Ensure the gate drive voltage supports the specified RDS(on) performance. Evaluate thermal management solutions to maintain junction temperatures within the specified operating range under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS discrete MOSFET portfolio, designed for general-purpose power switching. It utilizes silicon technology and is marketed under the HiperFET brand family. The TO-220 package facilitates easy integration into standard prototyping and industrial equipment designs.
Single FETs, MOSFETs Replacement Considerations
The IXTP70N075T is a similar N-channel MOSFET with comparable voltage ratings but slightly lower current capacity. Verify pinout compatibility and thermal resistance differences when substituting.
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