IXTP80N10T

$2.60

Description：MOSFET N-CH 100V 80A TO220AB
Series：Trench
Mfr：Littelfuse Inc.
Package：Tube

SKU:72498601c0a4 Category: Single FETs, MOSFETs Brand: Littelfuse Inc.

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Product introduction

IXTP80N10T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 100V 80A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTP80N10T

Description：MOSFET N-CH 100V 80A TO220AB
Series：Trench
Mfr：Littelfuse Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3040 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IXTP80N10T

IXTP80N10T

Single FETs, MOSFETs Overview

The Littelfuse IXTP80N10T is an N-channel power MOSFET from the Gen1 Trench Gate series, housed in a TO-220 through-hole package. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 80 A. The device exhibits a maximum on-state resistance (RDS(on)) of 0.014 ohms at 10 V gate drive. With a power dissipation rating of 230 W and a junction temperature range of -55 °C to 175 °C, it is engineered for high-efficiency switching in low-voltage, high-current applications.

Single FETs, MOSFETs Feature Summary

Utilizes Trench Gate technology to achieve exceptionally low on-state resistance for improved efficiency.
Designed specifically for low-voltage and high-current switching applications requiring robust thermal performance.
Constructed with a rugged TO-220AB through-hole package suitable for high-power circuit integration.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
Motor control circuits
Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing, as Littelfuse may offer variations in lead times or packaging formats. Confirm that the TO-220AB package dimensions match your PCB footprint requirements. Ensure the supplier provides traceability documentation consistent with Littelfuse quality standards for mission-critical deployments.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a balance of high current handling and low conduction losses at 100 V. The 80 A rating supports substantial load demands, while the 14 mΩ RDS(on) minimizes heat generation. Consider the TO-220 package's thermal characteristics for heatsinking strategies in compact enclosures.

Single FETs, MOSFETs Part Context

This part belongs to Littelfuse's Gen1 series of N-channel Trench Gate Power MOSFETs. The series focuses on optimizing the trade-off between on-resistance and switching speed for general-purpose power management. The IXTP80N10T represents a standard offering within this lineup, providing reliable performance for industrial and consumer electronics power stages.

Single FETs, MOSFETs Replacement Considerations

The IXYS IXTP80N075L2 is documented as an industry-standard alternative designed to meet similar hardware requirements. Verify pinout compatibility and exact electrical parameter tolerances before substitution to ensure circuit integrity.