Single FETs, MOSFETs IXTQ26N50P product image

IXTQ26N50P

$5.97
  • Description:MOSFET N-CH 500V 26A TO3P
  • Series:Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube

SKU:eb4a606bf91e Category: Brand:

  
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IXTQ26N50P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 500V 26A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTQ26N50P

  • Description:MOSFET N-CH 500V 26A TO3P
  • Series:Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:230mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id:5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):400W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-3P
  • Package / Case:TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for IXTQ26N50P

IXTQ26N50P

Single FETs, MOSFETs Overview

The IXTQ26N50P is a PolarHV Power MOSFET manufactured by Littelfuse (IXYS). It is an N-Channel enhancement mode silicon device housed in a TO-268AA package. Key electrical parameters include a maximum drain current of 26 A, a minimum drain-source breakdown voltage of 500 V, and a maximum on-resistance of 0.23 Ω. The component features avalanche rating capability with an energy handling capacity of 1000 mJ. It is configured as a single element with a built-in diode and has the drain connected to the case.

Single FETs, MOSFETs Feature Summary

  • Utilizes PolarHV technology for high-voltage power switching applications.
  • Features avalanche-rated construction for robustness against transient energy events.
  • Integrates a built-in body diode within the single-element configuration.

Single FETs, MOSFETs Applications

  • High-voltage power supply circuits
  • Industrial motor control systems
  • Inverter topologies

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation, confirming Littelfuse or IXYS origin, as the brand history involves acquisition. Ensure the ordering suffix matches the specific package variant required. Confirm RoHS compliance status and lead-free finish specifications against the latest datasheet revision to ensure regulatory adherence for the intended manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component based on the requirement for a 500V rated N-Channel MOSFET with a 26A continuous current capacity. The 0.23 Ω on-resistance dictates conduction loss characteristics. Verify that the thermal management solution accommodates the TO-268AA package dimensions and the specified avalanche energy rating for the target application's duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the PolarHV Power MOSFET series produced by Littelfuse, formerly IXYS. The series focuses on high-voltage silicon technologies designed for efficient power conversion. The IXTQ26N50P represents a specific configuration within this portfolio, optimized for medium-power industrial and commercial applications requiring reliable high-voltage switching.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Littelfuse or distributor substitution guides for equivalent voltage, current, and package specifications.

Single FETs, MOSFETs FAQ

What is the avalanche energy rating of the IXTQ26N50P?

The component is avalanche-rated with an energy handling capacity of 1000 mJ.

How is the case connected electrically?

The case connection is tied to the Drain terminal.

IXTQ26N50PIXTQ26N50P
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