IXTQ26N60P

$3.15

Description：MOSFET N-CH 600V 26A TO3P
Series：Polar
Mfr：IXYS
Package：Tube

SKU:089b0169a62b Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXTQ26N60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 26A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTQ26N60P

Description：MOSFET N-CH 600V 26A TO3P
Series：Polar
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：270mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4150 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：460W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for IXTQ26N60P

IXTQ26N60P

Single FETs, MOSFETs Overview

The IXTQ26N60P is a single N-Channel Power MOSFET from the PolarHV series, manufactured by IXYS. It utilizes silicon technology and is housed in a TO-3P-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 600 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 270 mOhms at a gate-source voltage of 10 V. It supports a power dissipation (Pd) of 460 W at 25°C case temperature and operates within a junction temperature range of -55°C to +150°C. The typical gate charge is 36 nC.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 600 V drain-source breakdown rating for robust performance in demanding environments.
Low on-resistance design to minimize conduction losses and improve thermal efficiency during operation.
Enhanced mode switching characteristics suitable for high-frequency power conversion applications.

Single FETs, MOSFETs Applications

High-voltage DC-DC converters
Motor control circuits
Induction heating systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official IXYS datasheets due to potential market variations. Confirm package integrity and pin alignment for TO-3P-3 mounting requirements. Ensure static-sensitive handling protocols are followed during storage and installation. Cross-reference lot codes with manufacturer records for traceability. Validate thermal management solutions align with the specified 460 W power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rating and 26 A continuous current capacity are required in a through-hole configuration. Compare Rds(on) values against alternative packages if space constraints allow surface-mount options. Evaluate thermal resistance parameters to ensure adequate heat sinking for the 460 W dissipation rating. Consider gate charge specifications for driving circuit complexity in high-speed switching designs.

Single FETs, MOSFETs Part Context

This part belongs to the PolarHV family of high-voltage MOSFETs from IXYS, designed for efficient power switching. The TO-3P-3 package provides mechanical stability and effective heat transfer for industrial applications. It serves as a discrete solution for medium-power electronics requiring reliable high-voltage isolation and low conduction losses.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IXTQ22N60P and IXTQ30N60P from the same manufacturer, offering similar voltage ratings with adjusted current capacities. Verify pin compatibility and thermal characteristics before substitution.