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IXTQ76N25T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 250V 76A TO3P. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTQ76N25T
- Description：MOSFET N-CH 250V 76A TO3P
- Series：Trench
- Mfr：Littelfuse Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：39mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：92 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：460W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
Single FETs, MOSFETs datasheet and documents for IXTQ76N25T
Single FETs, MOSFETs Overview
The IXTQ76N25T is an N-Channel Enhancement Mode Power MOSFET manufactured by Littelfuse (IXYS). It utilizes Trench technology and is housed in a TO-3P package. The device features a drain-source breakdown voltage of 250 V, a continuous drain current of 76 A at 25°C case temperature, and a maximum on-resistance of 44 mΩ. It supports a gate-source voltage of ±20 V and operates within a junction temperature range of -55°C to +150°C. The component includes an intrinsic body diode rated for 76 A continuous current.
Single FETs, MOSFETs Feature Summary
- Avalanche rated capability
- High current handling capacity
- Fast intrinsic rectifier
Single FETs, MOSFETs Applications
- DC-DC Converters
- Battery Chargers
- Switch-Mode and Resonant-Mode Power Supplies
- DC Choppers
- AC Motor Drives
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant against the datasheet pinout diagram. Confirm that the TO-3P mounting torque and lead soldering temperature limits are compatible with the assembly process. Ensure thermal management design accounts for the specified RthJC values under expected operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component for high-power switching applications requiring robust avalanche energy handling. Evaluate the thermal resistance requirements based on the intended duty cycle and ambient temperature. Compare the low on-resistance against system efficiency targets and switching frequency constraints.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS 76N25T series of N-Channel Trench MOSFETs. Other members include IXTA76N25T (TO-263), IXTP76N25T (TO-220), and IXTH76N25T (TO-247). All variants share identical electrical characteristics but differ in physical package dimensions and thermal interface properties.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include IXTA76N25T, IXTP76N25T, and IXTH76N25T. Verify mechanical footprint compatibility when swapping between TO-3P, TO-263, TO-220, or TO-247 packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
