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IXTU64N055T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 55V 64A TO251. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTU64N055T
- Description：MOSFET N-CH 55V 64A TO251
- Series：Trench
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251AA
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for IXTU64N055T
Single FETs, MOSFETs Overview
The IXTU64N055T is an N-Channel enhancement mode power MOSFET manufactured by IXYS. It features a TrenchMV technology design with avalanche rating capabilities. The device operates with a drain-source voltage of 55V and supports a continuous drain current of 64A. It utilizes a TO-251 (DPAK) through-hole package for mounting. Key electrical parameters include a maximum gate-source voltage of 20V, a threshold voltage ranging from 2V to 4V, and a typical gate charge of 38nC. The component is rated for operation between -55°C and +175°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchMV technology for enhanced performance characteristics
- Rated for avalanche energy handling capabilities
- Designed as a single N-channel enhancement mode device
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converter circuits
- Motor control applications requiring robust switching
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix or variant against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the TO-251 package footprint matches the target PCB layout requirements. Check for any obsolescence notices or lifecycle changes from IXYS prior to finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 55V N-Channel MOSFET with high current capability in a through-hole package is required. Consider the thermal resistance and power dissipation limits relative to the application's heat sinking strategy. Compare the on-resistance and gate charge specifications against alternative packages like TO-220 or D2PAK if space constraints allow.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS power MOSFET portfolio utilizing TrenchMV technology. It is designed for general-purpose power switching applications where reliability and efficiency are critical. The TO-251 package offers a balance between current handling capacity and board space utilization compared to larger through-hole packages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other IXYS parts in the same voltage and current class. Verify pinout compatibility and thermal characteristics when substituting with components from other manufacturers offering similar TO-251 packaged MOSFETs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
