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The IXXA30N65C3HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and features a TO-263HV (D2PAK) surface-mount package. The device supports a maximum collector-emitter voltage of 650V and a continuous collector current of 52A at 25°C. Key electrical parameters include a saturation voltage of 2.2V, a power dissipation rating of 230W, and a gate-emitter voltage range of ±20V. It operates within a temperature range of -55°C to +175°C.
Verify the specific suffix 'HV' to confirm the high-voltage variant specifications, as standard versions may differ. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Check for RoHS compliance status in the official datasheet before integration. Confirm that the D2PAK footprint matches your PCB design requirements. Review the latest Littelfuse/IXYS acquisition details for updated support channels.
Select this component when a 650V blocking capability and 52A continuous current are required in a compact surface-mount form factor. Consider the 2.2V saturation voltage for thermal management calculations in low-to-medium power designs. Evaluate the 230W power dissipation limit against your heatsinking strategy. Compare against other IXYS C3-class devices if lower on-state voltage is needed, accepting potential package changes.
This part belongs to the IXYS IXXA series of 5th generation Trench IGBTs. These devices are characterized by low gate charge and high efficiency. The series is widely used in industrial power conversion where space constraints and thermal performance are critical. IXYS has been acquired by Littelfuse, which continues to support these product lines.
Public confirmed substitute part numbers were not identified in the provided source material. Cross-reference with IXYS/Littelfuse application notes for pin-compatible alternatives such as the IXXA40N65C3HV or similar series members based on current requirements.