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The IXXH110N65B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the Trench GenX5 series, designed for high-voltage applications. The device features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 650 V. It supports a continuous collector current of 110 A at 25°C and can handle a pulsed collector current of 250 A. The saturation voltage is specified at 2.1 V, with a power dissipation rating of 880 W. Operating temperatures range from -55°C to +175°C junction temperature.
Verify component authenticity against official IXYS documentation before integration. Confirm that the specific ordering suffix matches the required pin configuration and thermal characteristics. Ensure storage conditions comply with moisture sensitivity levels defined in the datasheet to prevent package damage during soldering processes.
Select this component when a balance of moderate current handling and low conduction loss is required in a standard TO-247 footprint. Compare the 2.1 V saturation voltage against system efficiency targets. Evaluate thermal resistance parameters to ensure adequate heatsinking for the 880 W dissipation rating under expected load cycles.
This part belongs to the IXYS IXXH series of 650V IGBTs. It shares the TO-247-3 mechanical outline with other models in the lineup but differs in electrical ratings due to internal die size and XPT processing variations. It serves as a discrete solution for medium-power conversion stages.
Direct pin-compatible substitutes within the same family include IXXH80N65B4 or IXXH60N65B4H1, though these offer lower current ratings. Cross-family replacements require verification of Vce(sat), Qg, and thermal impedance parameters to ensure circuit compatibility.