SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXXH150N60C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and belongs to the Planar series with XPT and GenX3 trademarks. The device features a TO-247 package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 600 V, a continuous collector current of 300 A at 25°C, and a collector-emitter saturation voltage of 2.5 V. Maximum power dissipation is rated at 1.36 kW. The unit supports an operating temperature range from -55°C to +175°C.
Verify component authenticity against official IXYS documentation before integration. Confirm that the specific ordering suffix matches the required pin configuration and thermal characteristics. Ensure storage conditions comply with moisture sensitivity levels defined in the datasheet to prevent package damage during soldering processes.
Select this component when high current handling up to 300 A is required alongside a 600 V blocking capability. The TO-247 package facilitates effective heat dissipation for high-power applications. Evaluate thermal resistance requirements against the 1.36 kW power dissipation rating to ensure adequate heatsinking for the intended duty cycle.
This part belongs to the IXYS IXXH series of high-power IGBTs. It shares the 600V voltage class and XPT technology with other models like the IXXH50N60C3D1 but offers significantly higher current capacity. The TO-247 form factor distinguishes it from surface-mount alternatives within the same product family.
Direct substitutes may include IXXH150N60C3D1 if lead-free compliance is mandatory. Verify pinout compatibility and thermal specifications before substituting with other 600V 150A IGBTs.