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Product Detailed Parameters
- Description：IGBT PT 650V 65A TO-247AD
- Series：GenX4™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：65 A
- Current - Collector Pulsed (Icm)：146 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：230 W
- Switching Energy：1.55mJ (on), 480µJ (off)
- Input Type：Standard
- Gate Charge：52 nC
- Td (on/off) @ 25°C：32ns/170ns
- Test Condition：400V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD (IXXH)
- Grade：-
- Qualification：-
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Overview
The IXXH30N65B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX4 technologies to achieve optimized performance characteristics. The device features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 70 A at 25°C. It operates within a junction temperature range of -55°C to +175°C. The component is housed in a TO-247AD package with a maximum power dissipation of 230 W.
Feature Summary
- Incorporates XPT technology for enhanced short-circuit ruggedness and reduced tail current during switching.
- Utilizes GenX4 trench gate architecture to minimize conduction losses and improve thermal stability.
- Designed for high reliability with a wide operating temperature range up to 175°C.
Applications
- High-frequency welding inverters
- Switched-mode power supplies
- Motor drive systems
Procurement Notes
Verify the specific suffix against official datasheets, as variations may exist. Confirm RoHS compliance status through manufacturer documentation. Ensure the supplier provides traceable origin records. Cross-reference the Mouser part number 747-IXXH30N65B4D1 for accurate identification. Validate packaging details prior to ordering.
Selection Notes
Select this component for applications requiring robust short-circuit capability and low conduction losses. The 650V rating suits medium-voltage industrial environments. Evaluate thermal management requirements based on the 230W dissipation limit. Consider the TO-247AD package for efficient heat sinking solutions.
Part Context
This IGBT belongs to the IXYS Trench GenX4 series, designed for efficiency in power conversion. The XPT variant specifically targets improved ruggedness compared to standard designs. It serves as a key switching element in modern high-power electronic circuits.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in verified sources. Consult manufacturer cross-reference guides for potential alternatives.
