IXXH30N65C4D1

Overview

The IXXH30N65C4D1 is a single N-channel silicon MOSFET from the IXYS HiPerFET X-Class series, housed in a TO-247-3 through-hole package. It features a 650V drain-source breakdown voltage and a continuous drain current of 30A at 25°C. The device exhibits a maximum on-resistance of 180 milliohms and a gate charge of 59 nanocoulombs. Electrical characteristics include a threshold voltage of 3 volts, a power dissipation rating of 320 watts, and an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• Utilizes advanced trench technology for low conduction losses
• Optimized for high-speed switching applications
• Designed with robust avalanche energy capability

Applications

• High-frequency switch-mode power supplies
• Motor control circuits
• DC-DC converter topologies

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the physical marking on the TO-247-3 package matches the specified branding. Ensure compliance with RoHS directives as indicated in the technical documentation before finalizing procurement orders.

Selection Notes

Select this component when a 650V rated silicon MOSFET with moderate current handling is required. The 180 milliohm on-resistance balances conduction efficiency with switching speed. Consider the thermal resistance and package type for appropriate heatsinking solutions in the target circuit design.

Part Context

This device belongs to the HiPerFET X-Class family, representing a generation of silicon power MOSFETs optimized for efficiency. It serves as a discrete switching element within power electronics, distinct from integrated modules or alternative semiconductor technologies like silicon carbide.

Replacement Considerations

Direct substitutes include the IXXH30N65B4H1 and IXXH30N65L2KHV. Verify pinout compatibility and ensure that the replacement part meets or exceeds the original voltage, current, and thermal specifications.