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The IXXH40N65B4D1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS Trench GenX4 XPT series. It utilizes eXtended Plate Technology to optimize switching performance and conduction losses. The device features a TO-247AD-3 through-hole package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a saturation voltage of 1.5 V, a power dissipation rating of 455 W, and an operating temperature range from -55°C to +175°C.
Verify the specific suffix D1 against the manufacturer's official datasheet to confirm pinout configuration and packaging details. Ensure that the ordering information matches the exact part number required for the intended circuit design. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Select this component when a 650V IGBT with moderate current handling and optimized switching speed is required. The TO-247AD-3 package facilitates efficient thermal management via direct mounting to heatsinks. Consider the 1.5 V saturation voltage for efficiency calculations in low-to-medium power applications where switching frequency impacts overall system performance.
This device belongs to the IXYS IXXH series, which represents the fourth generation of Trench IGBTs. The series is characterized by the integration of XPT technology to enhance performance over previous generations like the IXYH series. It serves as a discrete solution for power conversion stages requiring robust voltage ratings and reliable operation under varying thermal conditions.
Direct substitutes within the same family include IXXH40N65B4. Verify compatibility with alternative manufacturers' parts such as those from Infineon or Mitsubishi by comparing Vceo, Ic, Vce(sat), and package dimensions to ensure mechanical and electrical interchangeability.