IXXX200N65B4

Overview

The IXXX200N65B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench GenX4 technology with XPT (eXtended Plateau) structure for optimized performance. The device features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 200 A at 25°C, with a pulsed current capacity of 370 A. The saturation voltage is specified at 1.7 V. It operates within a junction temperature range of -55°C to +175°C and dissipates up to 1.63 kW of power. The component is housed in a TO-247-3 through-hole package.

Feature Summary

• Incorporates Trench GenX4 technology combined with XPT structure to enhance switching efficiency and reduce conduction losses.
• Designed for high thermal stability with an extended maximum operating junction temperature of +175°C.
• Features a robust single configuration suitable for high-power industrial applications requiring reliable switching.

Applications

• Industrial motor drives and inverters
• High-frequency welding equipment
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the specific ordering suffix and manufacturing date code upon purchase to ensure compatibility with current production standards. Confirm RoHS compliance status directly with the supplier or manufacturer documentation, as regulatory requirements may vary by region and batch. Ensure the packaging type matches the intended assembly process, typically supplied in tubes for this package style.

Selection Notes

Select this component when a 650V blocking capability and 200A continuous current are required in a standard TO-247 footprint. Consider the 1.7V saturation voltage for thermal management calculations in high-current circuits. Evaluate the gate charge and switching times against the driver capabilities to ensure optimal performance in the target frequency range.

Part Context

This part belongs to the IXYS IGBT portfolio utilizing GenX4 technology. It is distinct from other models like IXYX200N65B5 which uses a PLUS247 package and different saturation characteristics. The IXXX series generally denotes specific pinout and thermal resistance profiles within the broader IXYS discrete transistor lineup.

Replacement Considerations

Direct substitutes must match the 650V/200A rating and TO-247-3 package. Verify pinout compatibility and thermal resistance values before substitution. Cross-referencing with similar IXYS models requires careful comparison of Vce(sat) and switching energy parameters to maintain circuit performance integrity.