IXYA30N120A4HV

IXYA30N120A4HV

$3.73
  • Description:IGBT PT 1200V 106A TO-263HV
  • Series:GenX4™, XPT™

SKU:d8e29ef75fd6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 1200V 106A TO-263HV
  • Series:GenX4™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):106 A
  • Current - Collector Pulsed (Icm):184 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 25A
  • Power - Max:500 W
  • Switching Energy:4mJ (on), 3.4mJ (off)
  • Input Type:Standard
  • Gate Charge:57 nC
  • Td (on/off) @ 25°C:15ns/235ns
  • Test Condition:960V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263HV
  • Grade:-
  • Qualification:-

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IXYA30N120A4HV

Overview

The IXYA30N120A4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the Trench series, housed in a TO-263HV-3 surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and offers a continuous collector current of 106 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 500 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

  • Incorporates XPT (Extra Plate Technology) for optimized trade-off between conduction and switching losses.
  • Features Trench gate technology to achieve low saturation voltage and improved switching performance.
  • Designed with high-voltage isolation capabilities suitable for demanding power electronics environments.

Applications

  • High-frequency inverters
  • Motor drive systems
  • Uninterruptible power supplies

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage during assembly processes.

Selection Notes

Select this component for applications requiring high voltage blocking capability in a compact surface-mount form factor. Evaluate thermal management requirements against the 500 W dissipation limit. Compare saturation voltage characteristics with alternative packages if lower on-state loss is critical for the specific circuit topology.

Part Context

This discrete IGBT is part of IXYS' broader portfolio of high-voltage power semiconductors. It complements other devices in the XPT and Trench families, offering a balance of robustness and efficiency for industrial power conversion applications where space constraints favor SMD packaging over through-hole alternatives.

Replacement Considerations

Direct substitutes may include other IXYS IGBTs in the TO-263HV-3 package with similar voltage and current ratings, such as the IXYA20N120B4HV, though current handling differences must be accounted for. Cross-brand replacements require careful verification of pinout compatibility and thermal resistance specifications.

IXYA30N120A4HVIXYA30N120A4HV
$3.73
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