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The IXYA30N120A4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the Trench series, housed in a TO-263HV-3 surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and offers a continuous collector current of 106 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 500 W. It operates within a temperature range of -55°C to +175°C.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage during assembly processes.
Select this component for applications requiring high voltage blocking capability in a compact surface-mount form factor. Evaluate thermal management requirements against the 500 W dissipation limit. Compare saturation voltage characteristics with alternative packages if lower on-state loss is critical for the specific circuit topology.
This discrete IGBT is part of IXYS' broader portfolio of high-voltage power semiconductors. It complements other devices in the XPT and Trench families, offering a balance of robustness and efficiency for industrial power conversion applications where space constraints favor SMD packaging over through-hole alternatives.
Direct substitutes may include other IXYS IGBTs in the TO-263HV-3 package with similar voltage and current ratings, such as the IXYA20N120B4HV, though current handling differences must be accounted for. Cross-brand replacements require careful verification of pinout compatibility and thermal resistance specifications.