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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 134A TO-263
- Series：Gen5 XPT™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：134 A
- Current - Collector Pulsed (Icm)：260 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 36A
- Power - Max：395 W
- Switching Energy：600µJ (on), 1.45mJ (off)
- Input Type：Standard
- Gate Charge：128 nC
- Td (on/off) @ 25°C：28ns/230ns
- Test Condition：400V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The IXYA60N65A5 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing XPT™ thin-wafer technology and Trench IGBT process. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC110) of 60 A at TC = 110 °C. The device exhibits a maximum collector-emitter saturation voltage (VCE(sat)) of 1.35 V at IC = 36 A and VGE = 15 V. Total gate charge (Qg) is typically 128 nC. Thermal resistance from junction to case (RthJC) is 0.38 °C/W. The component operates within a junction temperature range of -55 °C to 175 °C and is housed in a TO-263-2L surface-mount package.
Feature Summary
- Optimized for low conduction losses through proprietary XPT™ thin-wafer technology
- High surge current capability with square Reverse Biased Safe Operating Area (RBSOA)
- Low gate charge (QG) reducing gate drive requirements
- International standard TO-263 package configuration
Applications
- Power Inverters
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC) Circuits
- Battery Chargers
- Welding Machines
Procurement Notes
Verify the specific datasheet revision date against Littelfuse or IXYS official records before procurement. Confirm that the TO-263-2L package dimensions match the target PCB footprint layout. Ensure thermal management solutions accommodate the specified RthJC value for the intended operating environment.
Selection Notes
Select this component for applications requiring up to 5 kHz switching frequencies. Evaluate the 60 A continuous current rating against peak load demands. Consider the 1.35 V VCE(sat) for conduction loss calculations. Verify compatibility with standard 15 V gate drive voltages and ensure adequate heat sinking for the 395 W power dissipation rating at 25 °C case temperature.
Part Context
This device belongs to the Gen5 XPT™ IGBT family from IXYS/Littelfuse. It represents an evolution in trench gate technology designed to balance switching speed and conduction efficiency. The part number suffix 'A5' denotes the specific pinout and packaging variant compatible with standard TO-263 footprints.
Replacement Considerations
Direct replacements must match the 650 V rating, 60 A current capacity, and TO-263-2L package. Verify equivalent VCE(sat) and Qg values to maintain circuit performance. Cross-reference with other IXYS Gen5 parts like IXYH60N65A5 if through-hole mounting is acceptable.
