IXYH10N170CV1

IXYH10N170CV1

$9.85
  • Description:IGBT 1700V 36A TO-247
  • Series:XPT™

SKU:62e40f63ef64 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1700V 36A TO-247
  • Series:XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):36 A
  • Current - Collector Pulsed (Icm):84 A
  • Vce(on) (Max) @ Vge, Ic:3.8V @ 15V, 10A
  • Power - Max:280 W
  • Switching Energy:1.4mJ (on), 700µJ (off)
  • Input Type:Standard
  • Gate Charge:46 nC
  • Td (on/off) @ 25°C:14ns/130ns
  • Test Condition:850V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr):160 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 (IXYH)
  • Grade:-
  • Qualification:-

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IXYH10N170CV1

Overview

The IXYS IXYH10N170CV1 is a high-voltage XPT™ IGBT with an integrated diode, housed in a TO-247AD package. It features a collector-emitter breakdown voltage of 1700 V and a continuous collector current of 10 A at 110°C case temperature. The saturation voltage is typically 4.1 V at 15 V gate drive. Switching characteristics include a typical turn-off time of 70 ns and total gate charge of 46 nC. Thermal resistance from junction to case is 0.53 °C/W for the IGBT and 0.70 °C/W for the diode.

Feature Summary

  • XPT technology provides low saturation voltage and high blocking voltage.
  • Integrated fast recovery diode supports resonant-mode applications.
  • High power density design suitable for compact switching circuits.

Applications

  • Switch-mode and resonant-mode power supplies
  • Uninterruptible power supplies (UPS)
  • Laser generators
  • Capacitor discharge circuits
  • AC switches

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm ordering suffixes match required electrical tolerances. Request original manufacturer documentation to validate technical parameters before integration into designs.

Selection Notes

Select this component for high-voltage applications requiring low conduction losses. Ensure thermal management meets the specified junction temperature limits. Verify gate drive requirements align with the 15 V operating standard for optimal switching performance.

Part Context

This device belongs to the IXYS high-voltage XPT™ IGBT family. It utilizes trench gate technology to achieve improved efficiency compared to older planar designs. The series is designed for robust operation in demanding power electronics environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires independent verification of pinout compatibility and electrical parameter equivalence.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCES) is rated at 1700 V.

What is the typical reverse recovery time for the integrated diode?

The typical reverse recovery time (trr) for the integrated diode is 160 ns.

What is the maximum junction temperature?

The maximum junction temperature (TJ) is 175 °C.

IXYH10N170CV1IXYH10N170CV1
$9.85
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