SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXYH10N170CV1 is a high-voltage XPT™ IGBT with an integrated diode, housed in a TO-247AD package. It features a collector-emitter breakdown voltage of 1700 V and a continuous collector current of 10 A at 110°C case temperature. The saturation voltage is typically 4.1 V at 15 V gate drive. Switching characteristics include a typical turn-off time of 70 ns and total gate charge of 46 nC. Thermal resistance from junction to case is 0.53 °C/W for the IGBT and 0.70 °C/W for the diode.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm ordering suffixes match required electrical tolerances. Request original manufacturer documentation to validate technical parameters before integration into designs.
Select this component for high-voltage applications requiring low conduction losses. Ensure thermal management meets the specified junction temperature limits. Verify gate drive requirements align with the 15 V operating standard for optimal switching performance.
This device belongs to the IXYS high-voltage XPT™ IGBT family. It utilizes trench gate technology to achieve improved efficiency compared to older planar designs. The series is designed for robust operation in demanding power electronics environments.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires independent verification of pinout compatibility and electrical parameter equivalence.
The maximum collector-emitter voltage (VCES) is rated at 1700 V.
The typical reverse recovery time (trr) for the integrated diode is 160 ns.
The maximum junction temperature (TJ) is 175 °C.