IXYH12N250CV1HV

Overview

The IXYS IXYH12N250CV1HV is a high-voltage XPT IGBT with an integrated fast recovery diode, housed in a TO-247HV package. It features a collector-emitter breakdown voltage of 2500 V and a continuous collector current rating of 28 A at 25°C, decreasing to 12 A at 110°C. The device exhibits a maximum saturation voltage of 4.50 V at 25°C and 5.55 V at 150°C. Thermal resistance from junction to case is 0.48 °C/W for the IGBT and 0.80 °C/W for the diode. Operating temperatures range from -55°C to +175°C.

Feature Summary

• High blocking voltage capability up to 2500 V
• Integrated fast recovery diode for efficient switching
• Low saturation voltage for reduced conduction losses
• High peak current capability for robust operation

Applications

• Switch-mode and resonant-mode power supplies
• Uninterruptible power supplies (UPS)
• Laser generators
• Capacitor discharge circuits
• AC switches

Procurement Notes

Verify component authenticity through authorized Littelfuse or IXYS distributors. Confirm datasheet revision DS100792A(5/17) matches physical markings. Ensure thermal management meets RthJC specifications. Validate RoHS compliance status before integration into final assemblies.

Selection Notes

Select this component for applications requiring 2500 V isolation with moderate current handling. Evaluate gate drive requirements against the specified input capacitance and charge values. Consider thermal derating curves when designing for ambient temperatures exceeding 25°C. Verify PCB layout supports the TO-247HV footprint dimensions.

Part Context

This part belongs to the IXYS High Voltage XPT IGBT family. It shares electrical characteristics with the surface-mount variant IXYT12N250CV1HV but utilizes a through-hole TO-247HV package. The series is designed for high-power density applications requiring reliable high-voltage switching performance.

Replacement Considerations

The IXYT12N250CV1HV serves as a direct functional equivalent with identical electrical ratings, differing only in the TO-268HV surface-mount package. Verify pinout compatibility and thermal interface requirements when substituting between these form factors.

FAQ

What is the maximum transient gate-emitter voltage?

The maximum transient gate-emitter voltage (VGEM) is ±30 V.

How does the saturation voltage change at elevated temperatures?

At TJ = 150°C, the maximum VCE(sat) increases to 5.55 V compared to 4.50 V at 25°C under identical test conditions.

What is the reverse recovery time of the integrated diode?

The typical reverse recovery time (trr) of the integrated FRED is 165 ns.