ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 2500V 35A TO-247AD
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：126 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 16A
- Power - Max：500 W
- Switching Energy：4.75mJ (on), 3.9mJ (off)
- Input Type：Standard
- Gate Charge：97 nC
- Td (on/off) @ 25°C：14ns/260ns
- Test Condition：1250V, 16A, 10Ohm, 15V
- Reverse Recovery Time (trr)：19 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IXYH16N250C is a high-voltage silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a copacked configuration integrating an anti-parallel diode within a TO-247-3 package. The device supports a collector-emitter breakdown voltage of 2500 V and a continuous collector current of 16 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 4.0 V, a gate-emitter voltage range of ±20 V, and a power dissipation rating of 280 W. The component operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- High-voltage capability with 2500 V blocking voltage for demanding power applications
- Copacked design combining IGBT and anti-parallel diode in a single module
- Robust thermal performance suitable for high-power density environments
Applications
- High-voltage DC (HVDC) transmission systems
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- Induction heating equipment
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with required switching characteristics. Confirm RoHS compliance status and packaging type directly with authorized distributors or the manufacturer before placing orders.
Selection Notes
Select this component for circuits requiring 2500 V isolation with moderate current handling up to 16 A. Ensure the gate driver can supply the necessary charge within the specified voltage limits. Verify that the thermal management system can maintain the junction temperature below 175°C under peak load conditions.
Part Context
This part belongs to IXYS' high-voltage IGBT portfolio designed for industrial and energy infrastructure. It utilizes advanced silicon technology to balance switching speed and conduction losses. The TO-247-3 package provides a standardized footprint for through-hole mounting in high-power modules.
Replacement Considerations
Direct replacements must match the 2500 V rating, TO-247-3 package, and similar current capabilities. Verify pinout compatibility and thermal resistance values. Cross-reference with other IXYS HV series parts or equivalent offerings from manufacturers specializing in high-voltage semiconductors.
