IXYH30N120C4

Overview

The IXYH30N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT Gen 4 Trench technology and is housed in a TO-247-3 package for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 66 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.3 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 416 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• XPT Gen 4 Trench technology for optimized performance
• High switching speed capability up to 50 kHz
• Square Reverse Bias Safe Operating Area (RBSOA)
• Positive temperature coefficient for easy paralleling

Applications

• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix 'C4' against the manufacturer datasheet to confirm it denotes the standard commercial grade or specific testing variant, as suffixes can indicate differences in thermal resistance or packaging. Ensure the ordering quantity aligns with the tube pack size of 30 units typically associated with this package style. Confirm RoHS compliance status directly from the official documentation before finalizing procurement.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities up to 1.2 kV with moderate current handling around 66 A. The TO-247-3 package is suitable for through-hole PCB designs requiring robust mechanical mounting. Consider the 3.3 V saturation voltage when calculating conduction losses in the circuit design. Verify that the operating frequency requirements are compatible with the specified 50 kHz switching speed limit.

Part Context

This part belongs to the IXYS IXYH series of discrete IGBTs, which are designed for general-purpose high-voltage switching applications. The 'H' designation typically indicates the TO-247 package form factor. As a Gen 4 XPT device, it represents an evolution in trench gate technology aimed at reducing switching losses while maintaining high breakdown voltage stability compared to earlier generations.

Replacement Considerations

Potential substitutes include the IXYH30N120C3D1 from the same manufacturer family, though pinout and thermal characteristics must be verified. Cross-referencing with other 1200V, 66A TO-247 IGBTs from different manufacturers requires careful comparison of Vce(sat), switching times, and RBSOA curves to ensure functional compatibility.