IXYH40N120B3D1

$11.55

Description：IGBT 1200V 86A TO-247
Series：GenX3™, XPT™

SKU:e1d3721c16e8 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 86A TO-247
Series：GenX3™, XPT™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：86 A
Current - Collector Pulsed (Icm)：180 A
Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 40A
Power - Max：480 W
Switching Energy：2.7mJ (on), 1.6mJ (off)
Input Type：Standard
Gate Charge：87 nC
Td (on/off) @ 25°C：22ns/177ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：100 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 (IXYH)
Grade：-
Qualification：-

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IXYH40N120B3D1

Overview

The IXYH40N120B3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, housed in a TO-247AD-3 through-hole package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 40 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.5 V and supports a power dissipation of 680 W. Operating within a temperature range of -55°C to +175°C, it includes a maximum gate-emitter voltage rating of ±20 V and a leakage current of 100 nA.

Feature Summary

Utilizes GenX3 technology for optimized switching performance
Designed for high power density applications
Supports extended operating temperatures up to 175°C

Applications

Power inverters
Motor drives
PFC circuits
Battery chargers
Welding machines

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheets. Confirm RoHS compliance status via the specific product documentation. Ensure the TO-247AD-3 package matches design requirements before integration. Review electrical parameters for thermal management compatibility.

Selection Notes

Select this component for designs requiring 1200V blocking capability with moderate current handling. The TO-247AD-3 package facilitates efficient heat sinking for high-power dissipation scenarios. Consider the 2.5V saturation voltage when calculating conduction losses in the circuit design.

Part Context

This part belongs to the IXYS IGBT portfolio, specifically utilizing GenX3 trench technology. It shares the 1200V voltage class with other IXYS devices but offers distinct current and packaging characteristics compared to the broader family.