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Product Detailed Parameters
- Description：IGBT 1200V 200A TO-247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：380 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 82A
- Power - Max：1250 W
- Switching Energy：4.95mJ (on), 2.78mJ (off)
- Input Type：Standard
- Gate Charge：215 nC
- Td (on/off) @ 25°C：29ns/192ns
- Test Condition：600V, 80A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXYH)
- Grade：-
- Qualification：-
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Overview
The IXYH82N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the GenX3 series. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 120 A at 25°C. It operates within a temperature range of -55°C to +175°C, with a power dissipation rating of 600 W. The component is housed in a SOT-227B-4 package designed for screw mounting.
Feature Summary
- Incorporates XPT thin-wafer technology for optimized performance characteristics.
- Features GenX3 architecture designed for high-efficiency switching applications.
Applications
- Industrial motor drives
- Power inverters
- Uninterruptible power supply systems
Procurement Notes
Verify the specific ordering suffix against official IXYS documentation to confirm exact electrical parameters and packaging configuration. Ensure that the requested part number matches the required thermal and mechanical specifications for the target application. Cross-reference datasheet revisions to confirm compatibility with existing design constraints before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high voltage blocking capability and robust current handling in a single discrete package. Consider the SOT-227B-4 form factor for board space constraints where screw-mounting is feasible. Evaluate thermal management requirements based on the 600 W dissipation rating and junction temperature limits.
Part Context
This IGBT is part of the IXYS GenX3 product family, which emphasizes improved switching speed and reduced conduction losses compared to previous generations. The XPT technology specifically enhances the trade-off between saturation voltage and turn-off energy, making it suitable for medium-frequency power conversion tasks.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and parameter margins when considering alternative manufacturers or different IXYS series parts.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
Which mounting style is supported?
The device supports screw mounting via its SOT-227B-4 package.
