SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXYK120N120B3 is a GenX3™ silicon insulated gate bipolar transistor (IGBT) designed for high-power switching applications. It features a single N-channel configuration housed in a TO-264 package with three terminals. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 120 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a maximum power dissipation of 830 W, and a gate-emitter voltage range of ±20 V. It operates within a temperature range from -55°C to +175°C junction temperature.
Verify the exact suffix 'B3' against the manufacturer's latest datasheet to confirm pinout and specific electrical tolerances. Ensure the ordering part number matches the required package style and thermal characteristics. Cross-reference with authorized distributors to validate authenticity and traceability documentation before finalizing procurement orders.
Select this component when a 1.2 kV rating and 120 A continuous current are required in a TO-264 form factor. Compare the 1.8 V saturation voltage against system efficiency targets. Ensure the driving circuit can handle the specified ±20 V gate-emitter limits and that the PCB layout accommodates the thermal requirements of the 830 W power dissipation rating.
This model belongs to the IXYS GenX3™ family of high-performance IGBTs. It shares the core technology with other variants like the IXYX120N120B3 but differs in packaging and specific parameter optimization. The series is engineered for demanding power conversion environments requiring high reliability and efficient thermal handling.
Direct replacements may include the IXYX120N120B3 if the PLUS247 package is acceptable. Verify compatibility with the IXGK120N120B3, noting potential differences in saturation voltage and thermal resistance between the B3 and A3 suffixes.