IXYN100N65A3

IXYN100N65A3

$26.42
  • Description:IGBT MOD 650V 170A 600W SOT227B
  • Series:XPT™, GenX3™

SKU:bc82bf3ddbaf Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MOD 650V 170A 600W SOT227B
  • Series:XPT™, GenX3™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 70A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):170 A
  • Power - Max:600 W
  • Current - Collector Cutoff (Max):25 µA
  • Input Capacitance (Cies) @ Vce:-

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IXYN100N65A3

Overview

The IXYN100N65A3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3 series utilizing XPT technology and is housed in an SOT-227B-4 screw-mount package. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 170 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a power dissipation rating of 600 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Incorporates IXYS GenX3 planar trench technology with XPT (eXtended Plateau Technology) for optimized switching performance.
  • Designed for high-power applications requiring robust thermal management via a screw-mount SOT-227B-4 package.
  • Features a wide operating junction temperature range extending up to +175°C for enhanced reliability.

Applications

  • Industrial motor drives and inverters
  • High-frequency welding equipment
  • Uninterruptible power supplies (UPS)
  • Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific ordering suffix and manufacturing date code against the latest IXYS datasheet to ensure compatibility with required RoHS standards and packaging configurations. Confirm that the SOT-227B-4 mounting interface matches the heatsink design specifications before procurement.

Selection Notes

Select this component for circuits requiring a 650V blocking voltage and high current handling capability in a discrete form factor. Ensure the thermal design accommodates the 600W power dissipation limit and that the gate drive circuit supports the specified ±20V gate-emitter voltage range for proper switching control.

Part Context

This part is part of the IXYS IXYN series of high-power discrete IGBTs. It utilizes the GenX3 platform, which combines trench gate technology with XPT field-stop structures to reduce switching losses while maintaining low saturation voltage, distinguishing it from standard planar IGBTs.

Replacement Considerations

Direct replacements must match the 650V/170A rating and SOT-227B-4 package. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other IXYS GenX3 or XPT series devices offering similar electrical parameters if exact stock is unavailable.

IXYN100N65A3IXYN100N65A3
$26.42
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