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The IXYN100N65A3 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3 series utilizing XPT technology and is housed in an SOT-227B-4 screw-mount package. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 170 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a power dissipation rating of 600 W, and a gate-emitter voltage range of -20 V to +20 V. It operates within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix and manufacturing date code against the latest IXYS datasheet to ensure compatibility with required RoHS standards and packaging configurations. Confirm that the SOT-227B-4 mounting interface matches the heatsink design specifications before procurement.
Select this component for circuits requiring a 650V blocking voltage and high current handling capability in a discrete form factor. Ensure the thermal design accommodates the 600W power dissipation limit and that the gate drive circuit supports the specified ±20V gate-emitter voltage range for proper switching control.
This part is part of the IXYS IXYN series of high-power discrete IGBTs. It utilizes the GenX3 platform, which combines trench gate technology with XPT field-stop structures to reduce switching losses while maintaining low saturation voltage, distinguishing it from standard planar IGBTs.
Direct replacements must match the 650V/170A rating and SOT-227B-4 package. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other IXYS GenX3 or XPT series devices offering similar electrical parameters if exact stock is unavailable.