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The IXYN110N120B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT Plus technology and belongs to the GenX3 series, designed for high-voltage switching applications. The device features a TO-247-PLUS package with three terminals for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 1200 V and a continuous collector current of 110 A at 25°C. The typical collector-emitter saturation voltage is 2.6 V, with a maximum power dissipation of 1.3 kW. It operates within a temperature range from -55°C to +175°C.
Verify the specific suffix 'H1' against official datasheets to confirm compliance with RoHS directives and halogen-free status. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB footprint. Cross-reference the manufacturer's latest documentation to confirm active production status and availability before finalizing procurement plans.
Select this component when designing circuits requiring 1200 V blocking capability with moderate current handling around 110 A. The low saturation voltage makes it suitable for efficiency-critical applications. Verify that the gate drive circuitry supports the required voltage levels and that the thermal design can dissipate up to 1.3 W of power loss under worst-case operating conditions.
This IGBT is part of IXYS's broader portfolio of high-voltage discrete semiconductors. It shares the GenX3 platform family with other devices like the IXYX110N120C4 but differs in packaging and specific parameter tuning. The TO-247-PLUS form factor distinguishes it from standard TO-247 variants, offering improved thermal performance for demanding industrial power electronics.
Direct replacements may include the IXYX110N120C4 or IXYX120N120B3, provided the package compatibility and electrical ratings align with the original design requirements. Always verify pinout correspondence and thermal resistance values before substituting.