IXYN110N120C4H1

Overview

The IXYN110N120C4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the Gen 4 Trench IGBT family. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 110 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 650 W. It operates within a temperature range of -55°C to +175°C and is housed in a TO-247-3 package for through-hole mounting.

Feature Summary

• Incorporates XPT thin-wafer technology for optimized performance characteristics.
• Features Gen 4 Trench IGBT architecture for improved switching efficiency.
• Designed for high-voltage applications with robust thermal stability.

Applications

• High-frequency power supplies
• Motor control systems
• Uninterruptible Power Supply (UPS) units

Procurement Notes

Verify the specific ordering suffix H1 against official IXYS documentation to confirm pinout configuration and packaging details. Ensure compatibility with existing thermal management solutions given the 650 W dissipation rating. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated environments.

Selection Notes

Select this component for designs requiring 1200 V blocking capability with moderate current handling up to 110 A. Compare the 2.8 V saturation voltage against alternative devices to evaluate conduction losses. Consider the TO-247-3 package dimensions for PCB layout constraints and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits.

Part Context

This part belongs to the IXYS 1200V XPT IGBT series, which integrates advanced trench gate technology with field-stop structures. The series targets efficient power conversion in industrial and consumer electronics. The IXYN variant specifically denotes a standard single transistor configuration without an integrated anti-parallel diode, distinguishing it from other modules in the lineup.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing with similar 1200V/110A TO-247-3 IGBTs requires detailed parameter matching of Vce(sat), switching times, and thermal resistance to ensure functional equivalence.