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Product Detailed Parameters
- Description：IGBT PT 650V 250A SOT-227B
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：250 A
- Current - Collector Pulsed (Icm)：770 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 100A
- Power - Max：830 W
- Switching Energy：1.34mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：250 nC
- Td (on/off) @ 25°C：30ns/168ns
- Test Condition：400V, 50A, 2Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Grade：-
- Qualification：-
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Overview
The IXYN120N65B3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT GenX3 series. It features a TO-247-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 260 A at 25°C. Key electrical parameters include a saturation voltage of 2.8 V at 100 A, a gate-emitter leakage current of 100 nA, and a maximum power dissipation of 1360 W. It operates within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- Utilizes Extreme Light Punch Through (XPT) technology for optimized switching performance.
- Designed for high-power applications with low on-state voltage characteristics.
- Robust thermal management capability suitable for demanding industrial environments.
Applications
- Motor drive inverters
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific suffix D1 against official datasheets to confirm pinout and packaging variations. Ensure compatibility with existing thermal interface materials and mounting hardware for the TO-247-3 footprint. Cross-reference manufacturer lot codes for authenticity and traceability requirements.
Selection Notes
Select this component for circuits requiring 650V blocking capability and high current handling up to 260A. Consider the 2.8V saturation voltage for conduction loss calculations. Verify that the gate drive circuitry can handle the specified gate charge and leakage currents effectively.
Part Context
This part belongs to the IXYS XPT GenX3 IGBT family, which combines trench gate technology with light punch-through design. It is engineered for efficiency in medium-frequency switching applications. The TO-247-3 package provides a balance between current capacity and thermal performance for standard PCB or chassis mounting.
Replacement Considerations
Direct substitutes may include other IXYS XPT GenX3 devices with similar voltage and current ratings, such as the IXYH120N65C3, provided pinouts and thermal characteristics are verified. Always consult the latest datasheets for parameter deviations before substitution.
