ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MOD 1200V 105A 500W SOT227B
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 82A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：105 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：25 µA
- Input Capacitance (Cies) @ Vce：4.1 nF @ 25 V
Download product information
Overview
The IXYN82N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the GenX3 series. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 120 A at 25°C. Its collector-emitter saturation voltage is specified at 3.2 V, with a power dissipation rating of 600 W. The component operates within a temperature range of -55°C to +175°C and is housed in a SOT-227B-4 screw mount package.
Feature Summary
- Incorporates XPT thin-wafer technology for optimized switching performance
- Designed as a high-speed IGBT within the GenX3 product family
- Engineered for robust operation under high voltage conditions up to 1.2 kV
Applications
- Industrial motor drives
- High-frequency power supplies
- Welding equipment
Procurement Notes
Verify the specific manufacturer datasheet for the IXYN82N120C3 to confirm current RoHS compliance status and detailed electrical characteristics prior to integration. Ensure that thermal management solutions align with the 600 W power dissipation rating and the 175°C maximum junction temperature limits defined in the official specifications.
Selection Notes
Select this component when a single IGBT configuration with 1.2 kV blocking capability and 120 A continuous current is required. The SOT-227B-4 package necessitates screw mounting, which should be considered during mechanical design. Compare the 3.2 V saturation voltage against alternative devices to ensure efficiency targets are met for the intended load application.
Part Context
This part belongs to the IXYS IXYN82N120 series, representing the GenX3 generation of IGBTs. The series focuses on combining low conduction losses with fast switching speeds using XPT technology. The IXYN82N120C3 specifically denotes the variant packaged in SOT-227B-4, distinguishing it from other pinouts or packages within the same electrical family.
Replacement Considerations
Direct replacements must match the 1.2 kV / 120 A rating and SOT-227B-4 package. Verify pinout compatibility and saturation voltage characteristics before substituting.
