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The IXYN82N120C3H1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3™ series, utilizing XPT™ technology. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 82 A at 25°C. The device operates with a maximum power dissipation of 600 W and a saturated collector-emitter voltage of 3.2 V at 15 V gate drive. Designed for screw mount installation in SOT-227B-4 packages, it supports junction temperatures up to 175°C.
Verify the specific suffix H1 against official datasheets to confirm package type and thermal characteristics. Ensure sourcing channels provide genuine IXYS components with traceable documentation. Cross-reference pinouts and mounting requirements before integration into existing designs.
Select this component for circuits requiring fast switching speeds within the 20-50 kHz range. Compare saturation voltage and gate charge parameters against alternative IGBTs to optimize efficiency. Confirm that the thermal management solution accommodates the specified power dissipation limits under expected load conditions.
This part belongs to the IXYS GenX3™ family of high-speed IGBTs. It shares functional similarities with other models like the IXYN82N120C3 but may differ in packaging or specific thermal ratings. The series targets modern power electronics demanding higher frequency operation than standard hard-switched devices.
Direct substitutes include the IXYN82N120C3 if package compatibility allows. Verify electrical equivalence for any cross-brand replacements to ensure switching speed and voltage ratings match system requirements.