IXYP10N65C3

IXYP10N65C3

  • Description:IGBT PT 650V 30A TO-220-3
  • Series:GenX3™, XPT™

SKU:8c5dd480a522 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT PT 650V 30A TO-220-3
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):54 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 10A
  • Power - Max:160 W
  • Switching Energy:240µJ (on), 110µJ (off)
  • Input Type:Standard
  • Gate Charge:18 nC
  • Td (on/off) @ 25°C:20ns/77ns
  • Test Condition:400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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IXYP10N65C3

Overview

The IXYS IXYP10N65C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing XPT and GenX3 technologies. It features a 650V collector-emitter voltage rating and a continuous collector current of 10A at 25°C, with a pulse current capacity of 54A. The device operates in a TO-220-3 package with through-hole mounting. Key electrical parameters include a maximum power dissipation of 160W, a saturation voltage of 2.7V, and a gate charge of 18nC. Switching characteristics comprise a turn-on time of 44ns and a turn-off time of 190ns. The junction temperature range spans from -55°C to +175°C.

Feature Summary

  • Integrates IXYS XPT technology for optimized trade-offs between switching speed and conduction losses.
  • Incorporates GenX3 architecture to enhance ruggedness and thermal performance under high-power conditions.
  • Features a robust TO-220-3 leaded package designed for reliable through-hole mounting in industrial environments.

Applications

  • High-frequency motor drives and servo control systems
  • Industrial power supplies and switch-mode power converters
  • Uninterruptible power supply (UPS) inverters

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm exact electrical tolerances and packaging configurations. Ensure that the procurement channel provides valid traceability documentation consistent with Littelfuse/IXYS quality standards. Cross-reference the component marking code with official identification guides to prevent counterfeit substitution during acquisition.

Selection Notes

Select this component for applications requiring moderate current handling with efficient switching capabilities. The TO-220-3 form factor suits designs prioritizing straightforward thermal management via heatsinks. Evaluate the 160W power dissipation limit against the expected thermal resistance of the system to ensure safe operating area compliance under continuous load conditions.

Part Context

This device belongs to the IXYS IGBT portfolio, now managed by Littelfuse following corporate acquisition. It represents a discrete power semiconductor solution within the broader family of high-voltage switching components. The product line targets efficiency improvements in power conversion architectures where silicon-based switching remains cost-effective.

Replacement Considerations

Direct substitutes may include IXYS models such as IXYP15N65C3 or IXYP20N65C3 for higher current requirements. Alternative packages like TO-263 variants exist but require PCB layout modifications. Verify pin compatibility and thermal characteristics before implementing any cross-package replacements.

IXYP10N65C3IXYP10N65C3

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