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The IXYS IXYP20N120B4 is a single Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 package. It features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 20A at 25°C. The device utilizes trench gate technology to achieve low saturation voltage characteristics, with a typical VCE(sat) of 2.5V at specified conditions. Designed for through-hole mounting, it operates within a junction temperature range of -55°C to +175°C and offers a power dissipation capacity of 375W.
Verify the specific suffix 'B4' against the manufacturer's latest datasheet to confirm exact electrical parameters and pinout compatibility. Ensure the component source is authorized to avoid counterfeit risks. Check RoHS compliance status as per the specific manufacturing batch documentation before integration into regulated assemblies.
Select this component for applications requiring high-voltage blocking capabilities combined with moderate current handling in a standard through-hole form factor. Consider the thermal resistance and power dissipation limits relative to the heatsinking strategy. Evaluate the switching speed and saturation voltage trade-offs against system efficiency requirements compared to alternative trench technologies.
This part belongs to IXYS' trench gate IGBT family, designed to balance conduction losses and switching speeds. The TO-247 package is widely used in medium-power industrial electronics. The 'P' series designation typically indicates specific packaging or variant characteristics within the IXYS portfolio, distinct from other series like XXP or XXH.
Direct substitutes may include other 1200V/20A trench IGBTs in TO-247 packages from manufacturers such as Infineon or Mitsubishi. Verify that replacement parts match the pinout, saturation voltage, and thermal characteristics. Cross-reference datasheets for equivalent switching energy values to ensure circuit stability.