IXYP20N120C3

Overview

The IXYS IXYP20N120C3 is a single N-channel Power MOSFET belonging to the HiPerFET family. It utilizes XPT (eXtended Plateau Technology) thin-wafer technology to optimize performance in high-voltage applications. The device features a drain-source breakdown voltage of 1200 V and a continuous drain current of 20 A at 25°C. Key electrical parameters include a maximum on-resistance of 570 mΩ, a gate charge of 193 nC, and a power dissipation rating of 780 W. It operates within a temperature range of -55°C to +150°C and is housed in a TO-247-3 through-hole package.

Feature Summary

• Integrates XPT thin-wafer technology for optimized trade-off between conduction losses and switching speed.
• Features enhanced avalanche ruggedness and robust short-circuit capability suitable for demanding industrial environments.
• Utilizes a standard TO-247-3 leaded package designed for efficient thermal management via direct heatsink mounting.

Applications

• High-frequency switch-mode power supplies
• Industrial motor drive inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status as indicated in the specific product documentation. Ensure the TO-247-3 package dimensions match design requirements before integration. Request batch-specific test reports if critical reliability data is required for the application.

Selection Notes

Select this component when a 1200V rating is required with moderate current handling capabilities around 20A. The 570 mΩ on-resistance offers a balance between efficiency and cost for medium-power designs. Consider the 193 nC gate charge for driver selection to ensure adequate switching performance without excessive drive current demands.

Part Context

This part belongs to the IXYS HiPerFET series, which focuses on high-voltage silicon MOSFETs. The 'P' suffix typically denotes the specific pinout and package configuration within the IXYS lineup. It serves as a discrete alternative to integrated modules in lower-power high-voltage circuits.

Replacement Considerations

Direct replacements may include other 1200V, 20A TO-247-3 N-channel MOSFETs from manufacturers such as Infineon or ON Semiconductor. Verify that substitute parts meet or exceed the 570 mΩ Rds(on) and 780 W Pd ratings. Check for identical pinout compatibility to avoid PCB redesign.