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Product Detailed Parameters
- Description：IGBT PT 650V 130A TO-220-3
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：130 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 36A
- Power - Max：600 W
- Switching Energy：1.3mJ (on), 370µJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：22ns/80ns
- Test Condition：400V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXYS IXYP50N65C3 is a single silicon IGBT utilizing XPT and GenX3 technologies. It features a collector-emitter voltage of 650 V and a continuous collector current of 130 A at 25°C. The device has a maximum power dissipation of 600 W and an on-state collector-emitter saturation voltage of 2.1 V. It operates within a temperature range of -55°C to +175°C and is housed in a TO-220AB/FP package.
Feature Summary
- Integrates XPT technology for optimized trade-off between conduction losses and switching performance.
- Utilizes GenX3 architecture to achieve high current density and robust short-circuit withstand capability.
- Provides low on-state voltage drop for improved efficiency in high-power applications.
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- High-frequency power inverters
Procurement Notes
Verify the specific suffix and marking code against the manufacturer's latest datasheet to ensure compatibility with the intended application requirements. Confirm that the component meets all relevant environmental compliance standards required for the final assembly process before integration into production lines.
Selection Notes
Select this component for designs requiring high current handling in a through-hole configuration. Ensure the thermal management solution can dissipate up to 600 W while maintaining junction temperatures within the specified operational limits. Verify gate drive voltage compatibility with the -20 V to +20 V rating.
Part Context
This part belongs to the IXYS IGBT portfolio, specifically designed for medium to high-power industrial applications. It represents a discrete semiconductor solution offering reliable switching characteristics. The device is distinct from module-based alternatives by providing a standalone component option for custom PCB layouts.
Replacement Considerations
Direct substitutes include the IXYP50N65C3D1M or other C3-class devices from the same manufacturer series. Cross-reference pinout and thermal resistance values when considering alternative brands to ensure mechanical and electrical compatibility without redesigning the host circuit board.
