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Product Detailed Parameters
- Description：IGBT PT 650V 134A TO-220
- Series：XPT™, GenX5™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：134 A
- Current - Collector Pulsed (Icm)：260 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 36A
- Power - Max：395 W
- Switching Energy：600µJ (on), 1.45mJ (off)
- Input Type：Standard
- Gate Charge：128 nC
- Td (on/off) @ 25°C：28ns/230ns
- Test Condition：400V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220 (IXYP)
- Grade：-
- Qualification：-
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Overview
The IXYS IXYP60N65A5 is a single N-channel IGBT utilizing XPT™ GenX5™ technology, designed for high-power switching applications. It features a collector-emitter voltage (VCES) of 650V and a continuous collector current (IC110) of 60A at TC=110°C, with a maximum rating of 134A at TC=25°C. The device operates within a junction temperature range of -55°C to +175°C and dissipates up to 395W. Key electrical parameters include a saturated collector-emitter voltage (VCE(sat)) of 1.35V max at IC=36A, VGE=15V, and a total gate charge (Qg) of 128nC. Thermal resistance from junction to case (RthJC) is 0.38°C/W.
Feature Summary
- Optimized for low frequency high current switching
- High surge current capability
- Square RBSOA
Applications
- Power Inverters
- UPS
- Motor Drives
- SMPS
- PFC Circuits
- Battery Chargers
- Welding Machines
- Lamp Ballasts
Procurement Notes
Verify the manufacturer designation, as Littelfuse acquired IXYS. Confirm the package outline matches TO-220 specifications with Gate, Collector, and Emitter pin assignments. Ensure thermal interface material compatibility with the specified RthJC values for proper heat dissipation in your design.
Selection Notes
Select this component for designs requiring robust performance in high-current environments up to 10kHz. Consider the square RBSOA for inductive load protection. Evaluate the gate drive requirements against the 128nC total gate charge to ensure adequate driver capability for efficient switching transitions.
Part Context
This part belongs to the IXYS GenX5™ family of Extreme Light Punch Through IGBTs. It shares the core XPT technology with other models like IXYH60N65A5 but utilizes the TO-220 package configuration. The series is engineered for high power density and low gate drive requirements.
Replacement Considerations
Direct replacements must match the 650V/60A rating and TO-220 footprint. Verify pinout compatibility, specifically the tab-connected collector. Check if alternative packages like TO-247 or TO-263 are acceptable for the mechanical layout.
