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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 290A TO268HV
- Series：Gen5 XPT™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：290 A
- Current - Collector Pulsed (Icm)：790 A
- Vce(on) (Max) @ Vge, Ic：1.45V @ 15V, 75A
- Power - Max：830 W
- Switching Energy：2.46mJ (on), 3.55mJ (off)
- Input Type：Standard
- Gate Charge：314 nC
- Td (on/off) @ 25°C：46ns/390ns
- Test Condition：400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXYT)
- Grade：-
- Qualification：-
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Overview
The IXYT120N65A5HV is a 650 V, 120 A Gen5 XPT™ IGBT designed for switching frequencies up to 5 kHz. It utilizes proprietary XPT thin-wafer technology and a Trench process to achieve reduced thermal resistance and low conduction losses. The device features a TO-268HV package with a collector tab. Key electrical parameters include a collector-emitter saturation voltage of 1.45 V at 75 A, a continuous collector current of 120 A at 110 °C case temperature, and a maximum power dissipation of 830 W at 25 °C. It supports a junction temperature range from -55 °C to 175 °C.
Feature Summary
- Optimized for low conduction losses using XPT thin-wafer technology
- High surge current capability with square RBSOA
- Low gate charge and low gate drive requirements
- International standard package design
Applications
- Power Inverters
- UPS Systems
- PFC Circuits
- Battery Chargers
- Welding Machines
Procurement Notes
Verify the manufacturer designation as Littelfuse on official documentation, noting that IXYS was acquired by Littelfuse. Confirm the specific ordering suffix HV corresponds to the TO-268HV package variant. Ensure compliance with RoHS directives as specified in the datasheet before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high efficiency at switching frequencies up to 5 kHz. Consider the 1.45 V saturation voltage for conduction loss calculations. Evaluate the thermal resistance of 0.18 °C/W for heatsink sizing. Ensure the gate drive circuit can support the required 15 V level for optimal performance.
Part Context
This device belongs to the IXYS/Littelfuse Gen5 XPT™ IGBT family. It shares the XPT thin-wafer technology platform with other models like the IXYN series but is distinguished by its specific current rating and TO-268HV package configuration. It represents an evolution in trench IGBT designs focused on balancing switching speed and conduction efficiency.
Replacement Considerations
Direct substitutes within the same package and rating are not explicitly listed in the provided source material. Cross-referencing with other Gen5 XPT devices in the TO-268HV package may be necessary, ensuring identical VCES, IC ratings, and thermal characteristics.
