IXYT90N65A5HV

$7.68

Description：IGBT TRENCH FS 650V 220A TO268HV
Series：Gen5 XPT™

SKU:f166a2fed517 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 220A TO268HV
Series：Gen5 XPT™
Mfr：IXYS
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：220 A
Current - Collector Pulsed (Icm)：600 A
Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 60A
Power - Max：650 W
Switching Energy：1mJ (on), 3mJ (off)
Input Type：Standard
Gate Charge：260 nC
Td (on/off) @ 25°C：37ns/436ns
Test Condition：400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：TO-268HV (IXYT)
Grade：-
Qualification：-

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IXYT90N65A5HV

Overview

The IXYT90N65A5HV is a single N-channel IGBT utilizing XPT™ thin-wafer technology and Trench process. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC110) of 90 A at TC = 110 °C. The saturation voltage (VCE(sat)) is 1.35 V at IC = 60 A, VGE = 15 V. Total gate charge (Qg) is 260 nC at VCE = 325 V, IC = 90 A. Thermal resistance from junction to case (RthJC) is 0.23 °C/W. Maximum junction temperature is 175 °C, with power dissipation rated at 650 W at TC = 25 °C.

Feature Summary

Optimized for low conduction losses via proprietary XPT™ thin-wafer technology
High surge current capability with square Reverse Biased Safe Operating Area (RBSOA)
Low gate charge and reduced gate drive requirements
International standard package design

Applications

Power inverters
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC) circuits
Battery chargers
Welding machines

Procurement Notes

Verify the component manufacturer as Littelfuse, which acquired IXYS. Confirm the datasheet revision date (XZ 12/08/2023) matches the supplied documentation. Ensure the TO-268HV package outline dimensions align with your PCB footprint requirements before finalizing orders.

Selection Notes

Select this device for applications requiring up to 5 kHz switching frequencies. Evaluate thermal management capabilities based on the 0.23 °C/W junction-to-case resistance. Consider the 600 A pulsed collector current rating for inductive load scenarios within the specified safe operating area limits.

Part Context

This component belongs to the Gen5 XPT™ IGBT family developed by Littelfuse (formerly IXYS). It represents an evolution in trench IGBT technology designed to balance conduction efficiency with switching performance for medium-frequency power conversion systems.

Replacement Considerations

Direct replacements must match the 650 V / 90 A rating and TO-268HV package. Verify that alternative devices support similar VCE(sat) and Qg values to maintain existing gate drive circuit compatibility without modification.

FAQ

What is the maximum transient gate-emitter voltage?

The maximum transient gate-emitter voltage (VGEM) is ±30 V.

How does the saturation voltage vary with temperature?

The collector-emitter saturation voltage increases with junction temperature, reaching approximately 1.30 V at TJ = 150 °C under standard test conditions.