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The IXYS IXYX100N120B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX3™ technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C, with a peak pulsed current rating of 225 A. The device operates within a junction temperature range of -55°C to +175°C and dissipates up to 1150 W of power. Packaged in a PLUS247 through-hole housing, it exhibits a typical collector-emitter saturation voltage of 2.6 V and supports switching frequencies up to 30 kHz.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and electrical characteristics. Ensure compatibility with existing thermal management designs given the 1150 W power dissipation rating. Confirm RoHS compliance status if required by local regulations before finalizing procurement orders.
Select this component when a 1200 V rating and 100 A continuous current are required in a PLUS247 form factor. Consider the 2.6 V saturation voltage for efficiency calculations in high-current applications. Verify that the driving circuit can handle the gate charge requirements associated with GenX3™ technology for optimal switching performance.
This part belongs to the IXYS IXYY series of XPT™ GenX3™ IGBTs. These devices combine thin-wafer technology with trench gate architecture to achieve low on-state voltage drops. The series is designed for medium-power applications requiring high reliability and efficient thermal handling in compact packages.
Direct pin-compatible replacements may include other IXYS GenX3™ devices with matching voltage and current ratings, such as the IXYX100N120A4. Always verify saturation voltage and gate charge parameters to ensure equivalent thermal and drive performance.