IXYX100N120B3

IXYX100N120B3

$17.59
  • Description:IGBT PT 1200V 225A PLUS247
  • Series:GenX3™, XPT™

SKU:c842d691efa6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 1200V 225A PLUS247
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):225 A
  • Current - Collector Pulsed (Icm):530 A
  • Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 100A
  • Power - Max:1150 W
  • Switching Energy:7.7mJ (on), 7.1mJ (off)
  • Input Type:Standard
  • Gate Charge:250 nC
  • Td (on/off) @ 25°C:30ns/153ns
  • Test Condition:600V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:PLUS247™-3
  • Grade:-
  • Qualification:-

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IXYX100N120B3

Overview

The IXYS IXYX100N120B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX3™ technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C, with a peak pulsed current rating of 225 A. The device operates within a junction temperature range of -55°C to +175°C and dissipates up to 1150 W of power. Packaged in a PLUS247 through-hole housing, it exhibits a typical collector-emitter saturation voltage of 2.6 V and supports switching frequencies up to 30 kHz.

Feature Summary

  • GenX3™ trench gate technology for optimized conduction and switching performance
  • High thermal stability supporting operation up to 175°C junction temperature
  • Robust short-circuit capability ensuring system reliability under fault conditions

Applications

  • Industrial motor drives and servo systems
  • Uninterruptible power supplies (UPS)
  • High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and electrical characteristics. Ensure compatibility with existing thermal management designs given the 1150 W power dissipation rating. Confirm RoHS compliance status if required by local regulations before finalizing procurement orders.

Selection Notes

Select this component when a 1200 V rating and 100 A continuous current are required in a PLUS247 form factor. Consider the 2.6 V saturation voltage for efficiency calculations in high-current applications. Verify that the driving circuit can handle the gate charge requirements associated with GenX3™ technology for optimal switching performance.

Part Context

This part belongs to the IXYS IXYY series of XPT™ GenX3™ IGBTs. These devices combine thin-wafer technology with trench gate architecture to achieve low on-state voltage drops. The series is designed for medium-power applications requiring high reliability and efficient thermal handling in compact packages.

Replacement Considerations

Direct pin-compatible replacements may include other IXYS GenX3™ devices with matching voltage and current ratings, such as the IXYX100N120A4. Always verify saturation voltage and gate charge parameters to ensure equivalent thermal and drive performance.

IXYX100N120B3IXYX100N120B3
$17.59
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