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Product Detailed Parameters
- Description：IGBT 4500V 95A TO-247PLUS-HV
- Series：XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：4500 V
- Current - Collector (Ic) (Max)：95 A
- Current - Collector Pulsed (Icm)：350 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 40A
- Power - Max：660 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：36ns/110ns
- Test Condition：960V, 40A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247PLUS-HV
- Grade：-
- Qualification：-
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Overview
The IXYX40N450HV is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the XPT™ series and features a TO-247PLUS-HV through-hole package. The device supports a collector-emitter breakdown voltage of 4500 V and a continuous collector current of 95 A at 25°C. It handles a maximum power dissipation of 660 W and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate charge of 170 nC, a saturation voltage of 3.9 V at 40 A, and a pulse collector current capability of 350 A.
Feature Summary
- Utilizes XPT™ technology for optimized high-voltage performance
- Designed for robust operation in high-power switching applications
- Features a specialized HV package for enhanced thermal management
Applications
- High-voltage industrial motor drives
- Switched-mode power supplies
- Inverter circuits
- Welding equipment
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and packaging configuration. Confirm that the component meets RoHS3 compliance requirements if mandated by your assembly standards. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when a 4500 V blocking capability is required alongside a 95 A continuous current rating. Ensure the application circuit can accommodate the specified 170 nC gate charge for proper driver selection. Verify that the thermal design supports the 660 W power dissipation limit under the expected operating conditions and ambient temperatures.
Part Context
This IGBT is part of IXYS' high-voltage discrete semiconductor portfolio, specifically engineered for demanding power electronics environments. The XPT™ series designation indicates the use of plasma texturing technology, which improves the trade-off between conduction losses and switching speed compared to standard high-voltage devices.
Replacement Considerations
Potential substitutes include other 4500 V IGBTs from the same manufacturer family, such as the IXYT30N450HV or IXYF30N450. When evaluating alternatives, compare the continuous collector current, saturation voltage, and package dimensions to ensure mechanical and electrical compatibility.
