SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYX50N170C is a Gen5 XPT trench-gate Insulated Gate Bipolar Transistor manufactured by IXYS. It features a 1700V collector-emitter breakdown voltage and a continuous collector current of 50A at 25°C. The device utilizes eXtended Plate Technology (XPT) to optimize the trade-off between conduction losses and switching performance. Packaged in a PLUS247 module format, it offers a low saturated collector-emitter voltage and high short-circuit capability, suitable for demanding power conversion applications.
Verify the specific ordering suffix against official IXYS documentation to ensure correct thermal interface and pinout configuration. Confirm RoHS compliance status and manufacturing origin before finalizing procurement orders. Cross-reference datasheet revisions to validate electrical parameter tolerances and package dimensions for integration into existing designs.
Select this component when designing circuits requiring high voltage blocking capabilities combined with moderate current handling. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure gate drive voltages remain within the absolute maximum ratings to prevent device degradation during normal operation.
This device belongs to the IXYS Gen5 XPT IGBT family, which integrates trench gate technology with plasma implantation techniques. This lineage focuses on reducing switching energy while maintaining low saturation voltage. The PLUS247 package provides a standardized mechanical footprint for mounting on heatsinks in industrial power modules.
Direct replacements must match the 1700V rating, 50A current capacity, and TO-247/PLUS247 form factor. Verify that substitute devices offer comparable short-circuit time and RBSOA characteristics to maintain system safety margins without redesigning the gate drive circuitry.