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The onsemi J110 is an N-channel Junction Field-Effect Transistor (JFET) designed for digital switching applications requiring low on-resistance. It is available in TO-92 and SuperSOT-3 packages. Key electrical parameters include a Drain-Gate Voltage of 25 V, Gate-Source Voltage of -25 V, and a Zero-Gate Voltage Drain Current (IDSS) of 10 mA at VDS = 15 V. The Drain-Source On Resistance (rDS(on)) is specified at 18 Ω with VDS ≤ 0.1 V and VGS = 0. Total device dissipation is 625 mW in the TO-92 package and 350 mW in the SuperSOT-3 package. Operating and storage junction temperature ranges from -55°C to +150°C.
Verify the specific package variant required, as the datasheet covers both TO-92 and SuperSOT-3 configurations with different thermal characteristics. Confirm that the manufacturer designation aligns with current corporate ownership structures following industry acquisitions. Ensure component authenticity by checking markings against official documentation.
Select the J110 when a low on-resistance N-channel switch is needed for digital logic levels. Compare IDSS and rDS(on) specifications against circuit requirements to ensure proper conduction characteristics. Consider the SuperSOT-3 package for space-constrained designs or the TO-92 for standard through-hole layouts.
The J110 belongs to a family of N-channel JFET switches that includes the J108 and J109 models. These devices share similar structural designs but differ in specific electrical thresholds such as gate cutoff voltage and drain current. This series is engineered to provide consistent performance across varying temperature conditions.
The MMBFJ108 is listed within the same datasheet document alongside the J110. Verify pinout compatibility and electrical parameter alignment before substituting. Cross-referencing with other N-channel JFETs requires careful evaluation of rDS(on) and breakdown voltages.