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The J111RLRA is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a TO-92 surface-mount package, designated as Case 062AE. The device is characterized by a maximum drain-source voltage of 35V and a power dissipation rating of 625mW at 25°C ambient temperature. Key electrical parameters include a gate-source cutoff voltage range of -0.5V to -6V and a saturation drain current typically ranging from 1mA to 10mA.
Verify the specific suffix RLRA against the manufacturer's official datasheet to confirm pinout orientation and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if mandated by the target assembly process. Cross-reference the ordering part number with the latest onsemi documentation to avoid discrepancies in package variants.
Select this component when a low-noise N-channel JFET is required in a small surface-mount form factor. Evaluate the gate-source cutoff voltage range to ensure compatibility with the intended biasing network. Confirm that the 625mW power dissipation rating is sufficient for the expected thermal environment of the final application.
The J111 series comprises N-channel JFETs designed for general-purpose analog applications. The J111RLRA variant specifically utilizes the RLRA suffix to denote the TO-92 surface-mount package style. This family is commonly used in audio and instrumentation circuits where low input bias current and high input impedance are critical design factors.
Direct substitutes may include other N-channel JFETs in TO-92 SMD packages with similar V(BR)GSS and Idss characteristics. Verify pinout compatibility before substitution. Generic equivalents should be evaluated based on matching noise figures and cutoff voltage ranges to maintain circuit performance.