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Product Detailed Parameters
- Description：JFET N-CH 35V TO92
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：30 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The J111RLRPG is a single N-channel depletion-mode Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a TO-92 package with three leads. The device features a maximum drain-gate voltage of -35 Vdc and a gate-source voltage rating of -35 Vdc. Total device dissipation is rated at 350 mW at 25°C ambient temperature, derating by 2.8 mW/°C above this threshold. The operating junction temperature range spans from -65°C to +150°C. Electrical characteristics include a zero-gate-voltage drain current (IDSS) ranging from 2.0 mA to 20 mA and a static drain-source on-resistance (rDS(on)) with a maximum value of 30 Ω.
Feature Summary
- N-channel depletion mode operation for chopper transistor applications
- Low static drain-source on-resistance for efficient switching
- High breakdown voltage ratings for robust circuit protection
- Lead-free packaging compliant with environmental standards
Applications
- Chopper stabilized amplifier circuits
- Analog signal switching matrices
- Precision instrumentation front-ends
Procurement Notes
Verify the specific ordering suffix RLRP indicates tape and reel packaging configuration when sourcing. Confirm Pb-free status through official manufacturer documentation or component marking. Ensure the supplier provides traceability data matching the J111/D datasheet specifications. Cross-reference the part number against the latest onsemi product change notices to confirm manufacturing origin and compliance status before finalizing procurement orders.
Selection Notes
Select this component based on required IDSS ranges between 2.0 mA and 20 mA for specific biasing needs. Evaluate thermal management requirements given the 350 mW dissipation limit in the TO-92 package. Consider the low input capacitance characteristics for high-frequency switching performance. Verify that the negative gate-source voltage requirements align with the control circuit design capabilities.
Part Context
This device belongs to the J11x series of JFET chopper transistors produced by onsemi. The series includes variants such as J111, J112, and J113, differentiated primarily by their zero-gate-voltage drain current specifications. These components are designed for analog signal processing applications requiring low leakage and precise switching characteristics.
Replacement Considerations
Direct substitutes within the same family include J111RL1G and J111RLRA. Verify pinout compatibility and electrical parameter overlaps before substitution. Consult the official datasheet for detailed comparison of IDSS and rDS(on) tolerances across different package styles.
