J112-D26Z

$0.47

Description：JFET N-CH 35V TO92-3
Series：-

SKU:92ca03a3c546 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 35V TO92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：35 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：50 Ohms
Power - Max：625 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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J112-D26Z

Overview

The J112-D26Z is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-92-3 package with kinked leads for through-hole mounting. Key electrical specifications include a gate-source breakdown voltage of -35 V and a gate-source cutoff voltage of -5 V. The device supports a drain-source current of 5 mA at Vgs=0, with a maximum drain-source on-resistance of 50 Ohms. Power dissipation is rated at 625 mW.

Feature Summary

N-channel JFET configuration designed for switching applications
Silicon-based construction ensuring stable performance
Through-hole mounting capability via TO-92-3 package

Applications

Electronic circuit switching
Signal processing circuits
General-purpose transistor applications

Procurement Notes

Verify the specific suffix D26Z against official datasheets to confirm packaging details such as cut tape or reel options. Ensure compatibility with through-hole assembly processes given the TO-92-3 kinked lead form factor. Cross-reference manufacturer part numbers to avoid confusion with similar JFET variants.

Selection Notes

Select this component when an N-channel JFET switch is required with a -35 V gate-source breakdown rating. The 50 Ohm on-resistance and 5 mA current capacity suit low-power switching tasks. Consider the TO-92-3 package constraints for board space and thermal management relative to the 625 mW power dissipation limit.

Part Context

This device belongs to the J112 series of N-channel JFETs from onsemi. It shares functional similarities with other members like the J111 and J113, which are also N-channel switches in the TO-92 package. The series provides standardized switching solutions for discrete semiconductor designs.