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Product Detailed Parameters
- Description：JFET N-CH 35V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：50 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi J112 is an N-channel depletion mode Junction Field-Effect Transistor (JFET) designed for chopper applications. It operates within a drain-gate voltage range of -35 Vdc and a gate-source voltage limit of -35 Vdc. The device supports a maximum total power dissipation of 350 mW at 25°C ambient temperature, with a derating factor of 2.8 mW/°C above this threshold. Electrical characteristics include a zero-gate-voltage drain current (IDSS) ranging from 2.0 mA to 20 mA and a static drain-source on-resistance (rDS(on)) up to 50 Ω. The component functions reliably across an operating and storage junction temperature range of -65°C to +150°C.
Feature Summary
- Designed specifically as a chopper transistor utilizing N-channel silicon technology.
- Features low gate reverse current and high breakdown voltage capabilities.
- Provides stable switching performance with defined turn-on and turn-off delay times.
Applications
- Low-level analog switching circuits
- Sample-and-hold circuits
- Chopper-stabilized amplifiers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm package style and environmental compliance. Standard bulk packages differ from tape and reel configurations. Confirm that the selected variant matches the required pinout style for the intended PCB layout. Ensure the procurement channel sources components directly from authorized distributors to maintain traceability and quality assurance standards.
Selection Notes
Select the J112 when a low-noise, high-impedance N-channel switch is required for precision analog signal routing. Compare IDSS ranges and rDS(on) limits against circuit requirements to ensure adequate drive capability. Consider the TO-92 through-hole package constraints versus surface-mount alternatives like the MMBFJ112 if board space is limited. Validate thermal management needs based on the 350 mW dissipation rating in the final enclosure environment.
Part Context
The J112 belongs to the J11x series of N-channel silicon field-effect transistors manufactured by onsemi. This family includes the J111 and J113 variants, which share similar structural designs but differ in electrical parameters such as IDSS and VGS(off). These devices are commonly utilized in instrumentation and measurement equipment where low offset voltages and high input impedance are critical for signal integrity.
Replacement Considerations
Public confirmed substitute part numbers: J111, J113, MMBFJ112, SST112, IFN160BST3TR, IFN201AST3TR, IFN160CST3TR, IFN160BST3, MMBF4093.
FAQ
What is the pin configuration for the J112 in a TO-92 package?
Pin 1 is Drain, Pin 2 is Source, and Pin 3 is Gate.
What is the maximum gate-source breakdown voltage for the J112?
The maximum gate-source breakdown voltage is -35 Vdc.
How does the J112 differ from the J111 regarding drain current?
The J112 has a lower zero-gate-voltage drain current (IDSS) range of 2.0 mA to 20 mA compared to the J111, which typically exhibits higher current values.
