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Product Detailed Parameters
- Description：JFET N-CH 35V TO92
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：50 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi J112G is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for chopper applications. It operates within a drain-gate voltage range of -35 Vdc and a gate-source voltage range of -35 Vdc, with a total device dissipation of 350 mW at 25°C. The zero-gate-voltage drain current (IDSS) ranges from 2.0 mA to 20 mA, while the static drain-source on resistance (rDS(on)) spans 30 Ω to 50 Ω. The component supports junction temperatures from -65°C to +150°C and utilizes a TO-92 package.
Feature Summary
- N-channel depletion mode construction optimized for chopper transistor functions
- Lead-free packaging availability compliant with environmental standards
- Low input capacitance characteristics suitable for high-speed switching
Applications
- Chopper amplifier circuits
- Precision analog signal switching
- High-impedance buffer stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Confirm that the requested variant matches the required electrical tolerances for IDSS and rDS(on). Ensure compliance with RoHS directives if lead-free specifications are mandatory for the target assembly process.
Selection Notes
Select this component based on the required zero-gate-voltage drain current range and maximum on-resistance limits. Evaluate the thermal management requirements relative to the 350 mW power dissipation rating. Consider the TO-92 through-hole package constraints for board layout and mechanical stability in the final design.
Part Context
The J112G belongs to the J11x series of N-channel silicon field-effect transistors manufactured by onsemi. This series includes complementary devices such as the J111 and J113, which share similar physical packages but differ in specific electrical parameters like cutoff voltage and drain current ranges. These components are standard discrete semiconductors used in general-purpose analog applications.
Replacement Considerations
Direct substitutes include the J111 and J113 models from the same family. Verify pinout compatibility and ensure the alternative part meets the specific IDSS and rDS(on) requirements of the original circuit design.
FAQ
What is the pin configuration for the J112G in the TO-92 package?
Pin 1 is the Drain, Pin 2 is the Source, and Pin 3 is the Gate.
What is the maximum operating junction temperature for this device?
The maximum operating and storage junction temperature range extends up to +150°C.
Does the J112G support tape and reel packaging?
Yes, the J112RL1G variant is available in a tape and reel format containing 2000 units per reel.
