J112RL1

J112RL1

  • Description:JFET N-CH 35V TO92
  • Series:-

SKU:63e10d2b563c Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 35V TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):35 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):50 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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J112RL1

Overview

The onsemi J112RL1 is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for chopper applications. It operates within a drain-gate voltage of -35 Vdc and a gate-source voltage of -35 Vdc, with a total device dissipation of 350 mW at 25°C. The zero-gate-voltage drain current ranges from 2.0 to 20 mA, while the static drain-source on resistance is between 30 and 50 Ohms. The component supports junction temperatures from -65°C to +150°C and utilizes a TO-92 package.

Feature Summary

  • Designed specifically for use as a chopper transistor in precision analog circuits
  • Features interchangeable source and drain terminals for flexible circuit integration
  • Provides low gate reverse current and high input impedance characteristics

Applications

  • Chopper-stabilized amplifiers
  • Precision analog switching circuits
  • Sample-and-hold circuits

Procurement Notes

Verify the specific ordering suffix RL1 confirms tape and reel packaging containing 2000 units per reel. Confirm that the part number lacks the G suffix if lead-free compliance is not required, or includes it if RoHS standards are mandatory. Ensure the datasheet revision matches the design requirements before finalizing procurement orders.

Selection Notes

Select this component when a low-cost, single N-channel JFET is needed for chopper stabilization. Compare the IDSS range against circuit biasing requirements. Verify that the TO-92 through-hole package fits the board layout constraints. Consider thermal derating if operating above 25°C ambient temperature.

Part Context

This part belongs to the J11x series of N-channel depletion JFETs manufactured by onsemi. It shares the same electrical specifications as the J111 but may differ in specific parameter distributions or testing criteria defined by the manufacturer for the J112 variant within the same product family.

Replacement Considerations

Direct replacements include the J111RL1 from the same manufacturer. Cross-manufacturer equivalents should be verified against the pinout configuration and maximum ratings to ensure functional compatibility without redesigning the host circuit.

FAQ

What is the pin configuration for the J112RL1?

Pin 1 is the Drain, Pin 2 is the Source, and Pin 3 is the Gate.

Can the source and drain be swapped?

Yes, the source and drain terminals are interchangeable due to the symmetrical structure of the device.

What is the maximum power dissipation?

The total device dissipation is 350 mW at an ambient temperature of 25°C, requiring derating above that temperature.

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