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The onsemi J112RL1 is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for chopper applications. It operates within a drain-gate voltage of -35 Vdc and a gate-source voltage of -35 Vdc, with a total device dissipation of 350 mW at 25°C. The zero-gate-voltage drain current ranges from 2.0 to 20 mA, while the static drain-source on resistance is between 30 and 50 Ohms. The component supports junction temperatures from -65°C to +150°C and utilizes a TO-92 package.
Verify the specific ordering suffix RL1 confirms tape and reel packaging containing 2000 units per reel. Confirm that the part number lacks the G suffix if lead-free compliance is not required, or includes it if RoHS standards are mandatory. Ensure the datasheet revision matches the design requirements before finalizing procurement orders.
Select this component when a low-cost, single N-channel JFET is needed for chopper stabilization. Compare the IDSS range against circuit biasing requirements. Verify that the TO-92 through-hole package fits the board layout constraints. Consider thermal derating if operating above 25°C ambient temperature.
This part belongs to the J11x series of N-channel depletion JFETs manufactured by onsemi. It shares the same electrical specifications as the J111 but may differ in specific parameter distributions or testing criteria defined by the manufacturer for the J112 variant within the same product family.
Direct replacements include the J111RL1 from the same manufacturer. Cross-manufacturer equivalents should be verified against the pinout configuration and maximum ratings to ensure functional compatibility without redesigning the host circuit.
Pin 1 is the Drain, Pin 2 is the Source, and Pin 3 is the Gate.
Yes, the source and drain terminals are interchangeable due to the symmetrical structure of the device.
The total device dissipation is 350 mW at an ambient temperature of 25°C, requiring derating above that temperature.